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Joined: 06 Aug 2013
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 Posted: Tue Aug 06, 2013 11:21 pm Post subject: GaN enables smaller power supplies |
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GaN enables smaller power supplies
Fujitsu Semiconductor Europe has introduced a silicon substrate-based, gallium-nitride (GaN) power device that features a breakdown voltage of 150V.
The MB51T008A, which enables normally-off operations, is capable of achieving about a half the figure of merit of silicon based power devices with an equivalent breakdown voltage.
Fujitsu can now offer GaN devices that contribute to smaller, more efficient power supplies for a wide range of applications, from home appliances and ICT equipment to automotive and industrial. Sample quantities of the new product are available.
The device includes on-state resistance of 13 mO and total gate charge of 16 nC, which enables roughly half the FOM of silicon-based power devices with an equivalent breakdown voltage.
It is characterised by minimal parasitic inductance and high-frequency operations through the use of WLCSP packaging; and a proprietary gate design that enables normally-off operations. The new device is suited for high-side switches and low-side switches in dc/dc converters employed in power supplies for data communications equipment, industrial products, and automobiles.
In addition to MB51T008A, which features a breakdown voltage of 150 V, Fujitsu Semiconductor is also developing models with breakdown voltages of 600V and 30V, thereby helping to enable enhanced power efficiency in a wide range of product areas
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